Article thumbnail
Location of Repository

Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors

By Mengwei Si, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon and Peide D. Ye
Publisher: AIP Publishing
Year: 2013
DOI identifier: 10.1063/1.4794846
OAI identifier:
Provided by: MUCC (Crossref)
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • (external link)
  • Suggested articles

    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.