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Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors

By Mengwei Si, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon and Peide D. Ye
Publisher: AIP Publishing
Year: 2013
DOI identifier: 10.1063/1.4794846
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Provided by: MUCC (Crossref)
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