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Electronic disorder of P- and B-doped Si at the metal–insulator transition investigated by scanning tunnelling microscopy and electronic transport

By C Sürgers, M Wenderoth, K Löser, J K Garleff, R G Ulbrich, M Lukas and H v Löhneysen
Publisher: IOP Publishing
Year: 2013
DOI identifier: 10.1088/1367-2630/15/5/055009
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Provided by: MUCC (Crossref)
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