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Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

By M. Yazdanfar, I. G. Ivanov, H. Pedersen, O. Kordina and E. Janzén
Publisher: AIP Publishing
Year: 2013
DOI identifier: 10.1063/1.4809928
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Provided by: MUCC (Crossref)
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