High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

By Mami N. Fujii, Yasuaki Ishikawa, Kazumoto Miwa, Hiromi Okada, Yukiharu Uraoka and Shimpei Ono

Publisher: Springer Science and Business Media LLC

Year: 2015

DOI identifier: 10.1038/srep18168

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Provided by: MUCC (Crossref)

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