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High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

By Mami N. Fujii, Yasuaki Ishikawa, Kazumoto Miwa, Hiromi Okada, Yukiharu Uraoka and Shimpei Ono
Publisher: Springer Science and Business Media LLC
Year: 2015
DOI identifier: 10.1038/srep18168
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Provided by: MUCC (Crossref)
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