Abstract:- Shockley-Read-Hall recombination kinetics has been applied to explain the luminescence mechanism of erbium luminescence in silicon. Erbium atoms in silicon have been considered as recombination centers with specific values of capture and emission coefficients. Electron-hole recombination through these levels has been considered to be the origin of erbium excitation. Equating the capture and emission processes of photo generated excess carriers in the erbium related level, luminescence profiles during rise-time and fall-time has been calculated. The extended rise of erbium luminescence after termination of short excitation pulses of micro second durations has been explained by the model
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