Location of Repository

Rise-time and fall-time profile of erbium luminescence in silicon

By M. Q. Huda, S. I. Ali and S. A. Siddiqui

Abstract

Abstract:- Shockley-Read-Hall recombination kinetics has been applied to explain the luminescence mechanism of erbium luminescence in silicon. Erbium atoms in silicon have been considered as recombination centers with specific values of capture and emission coefficients. Electron-hole recombination through these levels has been considered to be the origin of erbium excitation. Equating the capture and emission processes of photo generated excess carriers in the erbium related level, luminescence profiles during rise-time and fall-time has been calculated. The extended rise of erbium luminescence after termination of short excitation pulses of micro second durations has been explained by the model

Topics: Key-words, Silicon, Luminescence, Erbium, excitation, Recombination
Year: 2014
OAI identifier: oai:CiteSeerX.psu:10.1.1.416.917
Provided by: CiteSeerX
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • http://citeseerx.ist.psu.edu/v... (external link)
  • http://www.wseas.us/e-library/... (external link)
  • Suggested articles


    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.