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Computer Simulations of a P (Al0.30Ga0.70As)-I (GaAs)-N (GaAs) Solar Cell

By Argyrios C. Varonides

Abstract

Abstract:- In this communication computations of several solar cell parameters are provided, namely, (a) photogeneration-recombination and (b) mobility profiles are obtained for a realistic P-I-N solar cell. The model of the device in mind combines the properties of two kinds of layers of direct gap semiconductors, by employing AlGaAs (at 30 % molar ratio of aluminum and 70 % of gallium) as a wide gap material and GaAs as a narrow gap one. This design has important advantages over GaAs p-n designs: (1) the p-layer of AlGaAs provides a wider window for the incoming solar photons, thus increasing overall carrier collection (2) the p-layer is kept narrow and the GaAs layers are being selected long, in order to provide chances for higher mobility values (as it is to be shown in the paper) (3) incorporation of GaAs in the intrinsic layer reduces scattering of excited carriers. Key-Words:- Solar Cells, intrinsic semiconductors, mobility, generation, recombination

Year: 2014
OAI identifier: oai:CiteSeerX.psu:10.1.1.416.9000
Provided by: CiteSeerX
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