A thorough investigation of N-channel multifinger MOSFET capacitances in dark and under optical illumination is presented in this paper. The intrinsic and extrinsic capacitances are modelled and analysed considering the scaling effects for sub-micron scale MOSFET. Bias dependence is taken into account and capacitances essential for small signal model for RF frequency operation are evaluated. The MOSFET under illumination indicates reduction in capacitance Cgs indicating its potential in analog and mixed signal applications at RF
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