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Effect of electrical bias on spin transport across a magnetic domain wall

By M. Deutsch, G. Vignale and M. E. Flatte'

Abstract

We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron crossing the wall. We show that increasing the voltage reduces the spin-flip rate, and is therefore equivalent to reducing the width of the domain wall. As an application, we show that this effect widens the temperature window in which the operation of a unipolar spin diode is nearly ideal.Comment: 11 pages, 3 figure

Topics: Condensed Matter - Mesoscale and Nanoscale Physics
Publisher: 'AIP Publishing'
Year: 2004
DOI identifier: 10.1063/1.1815044
OAI identifier: oai:arXiv.org:cond-mat/0406339

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