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By Xuefeng Zhang, Ryan S. Smith, Rui Huang and Paul S. Ho

Abstract

Mobility and Dit distributions for p-channel MOSFETs with HfO2/LaGeOx passivating layers on germaniu

Year: 2013
OAI identifier: oai:CiteSeerX.psu:10.1.1.353.6307
Provided by: CiteSeerX
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