Abstract — This paper describes seamless transitions among various MOS devices, ranging from bulk and partially/fullydepleted SOI to double-gate FinFETs and silicon-nanowire MOSFETs. The underlying governing equations for various structures are outlined, which provide the motivation for unifying MOS compact models with the unified regional modeling (URM) approach. Index Terms — compact model, double gate, FinFET, gate-allaround, MOSFET, silicon nanowire, SOI, surface potential, unified regional modeling. I
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