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2009 2nd International Workshop on Electron Devices and Semiconductor Technology Unified Compact Modeling for Bulk/SOI/FinFET/SiNW MOSFETs

By Xing Zhou, Guojun Zhu, Guan Huei See, Junbin Zhang, Shihuan Lin, Chengqing Wei, Zuhui Chen, Machavolu Srikanth, Yafei Yan, Ran Selvakumar and William Ch

Abstract

Abstract — This paper describes seamless transitions among various MOS devices, ranging from bulk and partially/fullydepleted SOI to double-gate FinFETs and silicon-nanowire MOSFETs. The underlying governing equations for various structures are outlined, which provide the motivation for unifying MOS compact models with the unified regional modeling (URM) approach. Index Terms — compact model, double gate, FinFET, gate-allaround, MOSFET, silicon nanowire, SOI, surface potential, unified regional modeling. I

Year: 2013
OAI identifier: oai:CiteSeerX.psu:10.1.1.352.5794
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