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Correlation between quality and thickness of µc-Si film deposited below 180°C by PECVD and TFTS characteristics

By R. Cherfi, Khalid Kandoussi, Nathalie Coulon, Claude Simon and Tayeb Mohammed-Brahim


International audienc

Topics: [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Publisher: HAL CCSD
Year: 2015
OAI identifier: oai:HAL:hal-01121712v1
Provided by: HAL-CentraleSupelec
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