An Extended Equivalent Circuit Model for CIGS Solar Cells


A four-diode equivalent circuit for CIGS thin film solar cells incorporating some physical phenomena such as trap states and grain boundaries is presented. The proposed model can be used for the precise analysis, extraction of the electrical parameters and exact prediction of the current versus voltage characteristic of CIGS thin film solar cells. Furthermore, the buffer layer current and impact ionization effects are introduced and discussed in the equivalent circuit

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Archivio istituzionale della ricerca - Alma Mater Studiorum Università di Bologna

Full text is not available time updated on 9/3/2019

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