Mobility Model for Electrons and Holes in FinFETs with High-k Stacks, Metal Gate and Stress

Abstract

A new analytical model for the electron and hole low-field mobility in ultra-thin body structures with differently-oriented channels and accounting for the effects of high- stacks, metal gates and complex stress configurations has been developed and calibrated on planar FETs. The new model is used to compute the effective mobility of non-planar Fin- FETs averaging the top- and sidewall-channel mobilities. A good agreement with a wide number of experiments is achieved

  • computer science
  • text mining

This paper was published in Archivio istituzionale della ricerca - Alma Mater Studiorum Università di Bologna.

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