In this work we present an investigation on a novel device concept meant to achieve a steep subthreshold slope by filtering out high-energy electrons entering the device channel. The filtering function is entrusted to a superlattice in the source extension region, which could possibly be fabricated by deposition of a number of appropriate semiconductor layers within a manufacturing process of vertical nanowires. Simulation results indicate that an SS = 26 mV/dec can be achieved using GaAs/AlGaAs as the constituent materials of the superlattice
Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.