Steep-Slope Nanowire FET with a Superlattice in the Source Extension


none4In this work we present an investigation on a novel device concept meant to achieve a steep subthreshold slope by filtering out high-energy electrons entering the device channel. The filtering function is entrusted to a superlattice in the source extension region, which could possibly be fabricated by deposition of a number of appropriate semiconductor layers within a manufacturing process of vertical nanowires. Simulation results indicate that an SS = 26 mV/dec can be achieved using GaAs/AlGaAs as the constituent materials of the superlattice.mixedE. Gnani; S. Reggiani; A. Gnudi; G. BaccaraniE. Gnani; S. Reggiani; A. Gnudi; G. Baccaran

Similar works

Full text


Archivio istituzionale della ricerca - Alma Mater Studiorum Università di Bologna

Provided original full text link
oaioai:cris.unibo.it:11585/93255Last time updated on 9/3/2019

Having an issue?

Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.