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A Techniquefi Extracting Small-Signal Equivalent-Circuit Elementsof HEMTs

By Man-Young Jeg Byung-Gyu, Man-young Jeg +a and Byung-gyu Kim


this paper, we present a technique to reliably extract extrinsicelems t values of a HEMT without causing any gate degradation. OurmrpA d issim44A to Refs. [7] and [8]from the standpoint that there is no application of a forward bias to the gate, but it di#ers from them with respect to the following two points. First, it biases the gate with a voltage slightly belo

Year: 2007
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