Location of Repository

A Techniquefi Extracting Small-Signal Equivalent-Circuit Elementsof HEMTs

By Man-Young Jeg Byung-Gyu, Man-young Jeg +a and Byung-gyu Kim

Abstract

this paper, we present a technique to reliably extract extrinsicelems t values of a HEMT without causing any gate degradation. OurmrpA d issim44A to Refs. [7] and [8]from the standpoint that there is no application of a forward bias to the gate, but it di#ers from them with respect to the following two points. First, it biases the gate with a voltage slightly belo

Year: 2007
OAI identifier: oai:CiteSeerX.psu:10.1.1.29.7477
Provided by: CiteSeerX
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • http://citeseerx.ist.psu.edu/v... (external link)
  • http://search.ieice.org/1999/f... (external link)
  • Suggested articles


    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.