Using nanoscale transistors to measure single donor spins in semiconductors


We propose a technique for measuring the state of a single donor electron spin using a field-effect transistor induced two-dimensional electron gas and electrically detected magnetic resonance techniques. The scheme is faciltated by hyperfine coupling to the donor nucleus. We analyze the potential sensitivity and outlne experimental reqiurements. Our measurement provides a single-shot, projective, and quantum non-demoltion measurement of an electron-encoded qubit state

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Last time updated on August 10, 2019

This paper was published in eScholarship - University of California.

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