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Highly p-doped graphene obtained by fluorine intercalation

By Andrew L. Walter, Ki-Joon Jeon, Aaron Bostwick, Florian Speck, Markus Ostler, Thomas Seyller, Luca Moreschini, Yong Su Kim, Young Jun Chang, Karsten Horn and Eli Rotenberg

Abstract

We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED .Comment: 4 pages, 2 figures, in print AP

Topics: Condensed Matter - Materials Science
Year: 2011
DOI identifier: 10.1063/1.3586256
OAI identifier: oai:arXiv.org:1104.2812
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