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Experimental Investigation of Spin Transport Properties in Silicon by Using a Non-local Geometry

By Masashi Shiraishi, Yoshiya Honda, Eiji Shikoh, Yoshishige Suzuki, Teruya Shinjo, Tomoyuki Sasaki, Tohru Oikawa, Kiyoshi Noguchi and Toshio Suzuki

Abstract

A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric currents. Theoretical fittings using the Hanle-type spin precession signals reveal that the spin polarization of the transported spin in the Si is much less affected by the change in the bias electric current compared with a case of the other spin devices, which induces a unique bias dependence of the spin signals.Comment: 22 pages, 4 figure

Topics: Condensed Matter - Materials Science
Year: 2011
OAI identifier: oai:arXiv.org:1103.0355
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