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Localized States and Resultant Band Bending in Graphene Antidot Superlattices

By Milan Begliarbekov, Onejae Sul, John J. Santanello, Nan Ai, Xi Zhang, Eui-Hyeok Yang and Stefan Strauf

Abstract

We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically back-gated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type doping. These findings are of great interest for light-harvesting applications that require field separation of electron-hole pairs.Comment: NanoLetters, 201

Topics: Condensed Matter - Mesoscale and Nanoscale Physics
Year: 2011
DOI identifier: 10.1021/nl1042648
OAI identifier: oai:arXiv.org:1102.5135
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