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Simulation and optimization of HEMTs

By Hesameddin Ilatikhameneh, Reza Ashrafi and Sina Khorasani

Abstract

We have developed a simulation system for nanoscale high-electron mobility transistors, in which the self-consistent solution of Poisson and Schr\"odinger equations is obtained with the finite element method. We solve the exact set of nonlinear differential equations to obtain electron wave function, electric potential distribution, electron density, Fermi surface energy and current density distribution in the whole body of the device. For more precision, local dependence of carrier mobility on the electric field distribution is considered. We furthermore compare the simulation to a recent experimental measurement and observe perfect agreement. We also propose a graded channel design to improve the transconductance and thereby the threshold frequency of the device.Comment: 8 pages, 19 figure

Topics: Condensed Matter - Mesoscale and Nanoscale Physics
Year: 2016
DOI identifier: 10.1109/ACTEA.2016.7560101
OAI identifier: oai:arXiv.org:1102.4070
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