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Radiation Resistance of SOI Pixel Devices Fabricated With OKI 0.15 m FD-SOI Technology

By Kazuhiko Hara, Mami Kochiyama, Ai Mochizuki, Tomoko Sega, Yasuo Arai, Koichi Fukuda, Hirokazu Hayashi, Toru Tsuboyama and Yoshinobu Unno


Abstract—Silicon-on-insulator (SOI) technology is being investigated for monolithic pixel device fabrication. The SOI wafers by UNIBOND allow the silicon resistivity to be optimized separately for the electronics and detector parts. We have fabricated pixel detectors using fully depleted SOI (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel devices consisting of 32 32 matrix with 20 m 20 m pixels were irradiated with 60 Co ’s up to 0.60 MGy and with 70-MeV protons up to 9.3 10 15 p cm 2. The performance characterization was made on the electronics part and as a photon detector from the response to reset signals and to laser. The electronics operation was affected by radiation-induced charge accumulation in the oxide layers. Detailed evaluation of the characteristics changes in the transistors was separately carried out using transistor test structures to which a wider range of irradiation, from 0.12 kGy to 5.1 MGy, was made with 60 Co ’s. Index Terms—FD-SOI, monolithic pixel, threshold shift. I

Year: 2012
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