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Enhanced current densities in Au/molecule/GaAs devices

By Saurabh Lodha and David B. Janes

Abstract

Metal-molecule-semiconductor heterostructures have been studied in a Au/molecule/p-type GaAs configuration. Stable monolayers of alkanemonothiols, alkanedithiols and aromaticdithiols were self-assembled from solution on heavily doped p-type (p+) GaAs surfaces. A low-energy, indirect path technique was used to evaporate Au on the molecular layer to minimize damage or penetration of the layer. Electrical characteristics of the devices were evaluated by current-voltage (I-V) measurements. In comparison to Au/p +-GaAs control samples, which show rectifying behavior expected for Schottky barriers, the Au/molecule/p +-GaAs structures exhibit higher conductances and less rectification. The results indicate strong molecular coupling to the contacts with a significant density of molecular states (DOS) near the Fermi level and are consistent with the presence of molecular dipole moments at the interface. A simple electrostatic model, which considers th

Year: 2011
OAI identifier: oai:CiteSeerX.psu:10.1.1.203.5314
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