Location of Repository

The Influence of Localized State Charging on 1/f α Tunneling Current Noise Spectrum

By V. N. Mantsevich, N. S. Maslova, A. I. Oreshkin, S. I. Oreshkin, D. A. Muzychenko, S. V. Savinov and V. I. Panov

Abstract

Abstract. We report the results of theoretical and UHV STM investigations of low frequency tunneling current noise spectra component (1/f α) in vicinity of individual impurity atoms on the InAs (110) surface. It is found that power law exponent of tunneling current noise spectra strongly differs for measurements above flat surface and above impurity atom. Obtained results can be explained by switching ON and OFF of Coulomb interaction of conduction electrons with one or two charged localized states in tunneling junction which results in power law singularity of lowfrequency part of tunneling current noise spectrum 1/f α. Power law exponent in different low frequency ranges depends on the relative values of Coulomb interaction of conduction electrons with different charged impurities

Year: 2011
OAI identifier: oai:CiteSeerX.psu:10.1.1.186.8438
Provided by: CiteSeerX
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • http://citeseerx.ist.psu.edu/v... (external link)
  • http://www.mff.cuni.cz/veda/ko... (external link)
  • Suggested articles


    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.