ABSTRACT: We report in this paper on the latest research results of microcrystalline (µc-Si:H) silicon solar cells fabricated in a commercial Oerlikon Solar (former UNAXIS) KAI-S single-chamber PECVD reactor (substrate size up to 35 cm x 45 cm) driven at an excitation frequency of 40.68 MHz. The cell structure consists of a stack of glass/ front-TCO / p-i-n µc-Si:H solar cell / back-contact. Our “in-house ” boron-doped ZnO (zinc oxide), prepared by LP-CVD (low-pressure chemical vapour deposition) is implemented for the front and the back-side transparent conductive contacts (TCO) of the devices. Homogeneous solar-grade films can be deposited at a rate up to 18Å/sec The Raman crystallinity of these films is of 62 % in the center as well as on the border of the whole substrate area (35x45cm 2). By suitable optimisation of the device fabrication process we are able to make µc-Si:H solar cells with conversion efficiencies of 8.4 % in a 'true ' single-chamber process. The i-layer is 1.5µm thick and is deposited at 0.7 nm/sec on LP-CVD ZnO. The back ZnO contact is coated with white paint. Finally, we show that µc-Si:H solar cells with 6 % efficiency can be grown, using so called 'low-flow ' silane plasma in a depletion regime at a rate of 1 nm/s
To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.