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FAST GROWTH OF MICROCRYSTALLINE SILICON SOLAR CELLS ON LP-CVD ZNO IN INDUSTRIAL KAI PECVD REACTORS

By Luc Feitknecht, Fréderic Freitas, Cédric Bucher, Julien Bailat, Arvind Shah, Christophe Ballif, Johannes Meier, Joel Spitznagel, Ulrich Kroll, B. Strahm, A. A. Howling, L. Sansonnens and Ch. Hollenstein

Abstract

ABSTRACT: We report in this paper on the latest research results of microcrystalline (µc-Si:H) silicon solar cells fabricated in a commercial Oerlikon Solar (former UNAXIS) KAI-S single-chamber PECVD reactor (substrate size up to 35 cm x 45 cm) driven at an excitation frequency of 40.68 MHz. The cell structure consists of a stack of glass/ front-TCO / p-i-n µc-Si:H solar cell / back-contact. Our “in-house ” boron-doped ZnO (zinc oxide), prepared by LP-CVD (low-pressure chemical vapour deposition) is implemented for the front and the back-side transparent conductive contacts (TCO) of the devices. Homogeneous solar-grade films can be deposited at a rate up to 18Å/sec The Raman crystallinity of these films is of 62 % in the center as well as on the border of the whole substrate area (35x45cm 2). By suitable optimisation of the device fabrication process we are able to make µc-Si:H solar cells with conversion efficiencies of 8.4 % in a 'true ' single-chamber process. The i-layer is 1.5µm thick and is deposited at 0.7 nm/sec on LP-CVD ZnO. The back ZnO contact is coated with white paint. Finally, we show that µc-Si:H solar cells with 6 % efficiency can be grown, using so called 'low-flow ' silane plasma in a depletion regime at a rate of 1 nm/s

Topics: Micro Crystalline Si, PECVD, Thin Film, Devices
Year: 2006
OAI identifier: oai:CiteSeerX.psu:10.1.1.173.1342
Provided by: CiteSeerX
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