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a-Si:H transport parameters from experiments based on photoconductivity

By C. Longeaud and Javier Alejandro Schmidt

Abstract

In this paper we review some of the techniques based on the photoconductivity property of hydrogenated amorphous silicon (a-Si:H) from which it is possible to extract transport parameters as well as density of states (DOS) spectroscopies. We also present a new experiment based on the steady state photocarrier grating technique. We show that combined with simple steady state photoconductivity it gives information on the DOS. The comparison of these results with those of other techniques used for DOS measurements theoretically allows determination of transport parameters in a-Si:H.Fil: Longeaud, C.. Laboratoire Génie Électrique Et Électronique de Paris;Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentin

Topics: PHOTOCONDUCTIVITY, DENSITY OF STATES, HYDROGENATED AMORPHOUS SILICON, Astronomía, Ciencias Físicas, CIENCIAS NATURALES Y EXACTAS, Recubrimientos y Películas, Ingeniería de los Materiales, INGENIERÍAS Y TECNOLOGÍAS
Publisher: Elsevier Science
Year: 2012
DOI identifier: 10.1016/j.jnoncrysol.2011.11.018
OAI identifier: oai:ri.conicet.gov.ar:11336/76402
Provided by: CONICET Digital
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