We investigated the metal-diamond interface formation and the growth of chromium thin films as contact material on diamonds, which should help to improve single-crystal diamond (SCD) particle detectors. As shown previously , we are able to derive information about metal film conductivity by means of infrared spectroscopy (IRS) and analysing the data with a Drude type dielectric function. In this manner we learned that Cr films deposited on diamond substrates at room temperature under ultra high vacuum (UHV) conditions exhibit a significantly lower electronic conductivity than bulk Cr, indicating a defect rich layer. For the next step towards understanding the physics of the Cr-diamond interface we investigated the annealing of Cr on SCD with IRS. In case of polycrystalline diamond (PCD), annealing at 900 K fo
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