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Nano nitrides emerging



AbstractKorean researchers are working on large scale synthesis of gallium nitride nanosaws using CVD. A large quantity of GaN nanostructures (nanosaws) was produced by a CVD of Ga/Ga2O3/B2O3 mixture under NH3 flow. All of them have a single_edged sawlike configuration. The average width of the nanosaw is in the range 100 nm—1m and the thickness is about 1/10 of the average width. They consist of a single_crystalline wurtzite structure with the [0 1 1] direction parallel to the long axis and the [0 0 1] direction perpendicular to the edge of saw teeth. Jagged edges are in an angle of 100° – 110°. The room_temperature cathodoluminescence exhibits a strong band_edge emission at 3.46eV. The idea is catching on. At a US surface science symposium in June, a poster prepared by D Moore, et al was devoted to ‘Nanobelts, nanocombs, nanowindmills and nanosaws of wurtzite ZnS.’This is a short news story only. Visit for the latest advanced semiconductor industry news

Publisher: Elsevier Science Ltd.
Year: 2003
DOI identifier: 10.1016/S0961-1290(03)00747-6
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