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with Radiation Hardened Digital Control

By F. Baronti, P. C. Adell, W. T. Holman, R. D. Schrimpf, L. W. Massengill, A. F. Witulski and M. Ceschia


. Abstract—The design of a DC/DC switching boost converter based on a radiation hardened digital controller implemented in SRAM FPGAs is presented. Single event functional interrupts (SEFIs) are the dominant radiation effects in SRAM-based FPGAs. When applying digital control using SRAM FPGAs in a switching converter application, SEFIs result in missing pulses in the generated PWM control signal of the converter that cause large transient drops at the converter output. Therefore, we have developed and applied a radiation-hardness-by-design technique based on a logic duplication approach at both the logic and device levels and on a non-disruptive resynchronization mechanism, which ensures the continuous operation of the converter in the presence of radiation induced SEFIs. The proposed RHBD technique is validated with both VHDL simulations and experimental results. Index Terms—DC/DC power converter, boost converter, digital control, single event functional interrupt (SEFI), radiation-hardness-by-design (RHBD)

Year: 2009
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