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Onset voltage shift due to non-zero Landau ground state level in coherent magnetotransport

By Dae Kwan Kim and Patrick Roblin Y

Abstract

Coherent electron transport in double-barrier heterostructures with parallel electric and magnetic elds is analyzed theoretically and with the aid of a quantum simulator accounting for 3-dimensional transport e ects. The onset-voltage shift induced by the magnetic eld in resonant tunneling diodes, which was previously attributed to the cyclotron frequency wc inside the well is found to arise from an upward shift of the non-zero ground (lowest) Landau state energy in the entire quantum region where coherent transport takes place. The spatial dependence of the cyclotron frequency is accounted for and veri ed to have a negligible impact on resonant tunneling for the device and magnetic eld strength considered. A correction term for the onset-voltage shift arising from the magnetic eld dependence of the chemical potential is also derived. The Landau ground state with its nonvanishing nite harmonic oscillator energy hwc=2 isveri ed however to be the principal contributor to the onset voltage shift at low temperatures

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Year: 2009
OAI identifier: oai:CiteSeerX.psu:10.1.1.135.9758
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