Skip to main content
Article thumbnail
Location of Repository

A new physical model for the kink effect on InAlAs/InGaAs HEMT’s

By Mark H. Somerville, Er Ernst, Jesús A. Del Alamo and Senior Member


Abstract—We present a new model for the the kink effect in In-AlAs/InGaAs HEMT’s. The model suggests that the kink is due to a threshold voltage shift which arises from a hole pile-up in the extrinsic source and an ensuing charging of the surface and/or the buffer-substrate interface. The model captures the many of the observed behaviors of the kink, including the kink's dependence on bias, time, temperature, illumination, and device structure. Using the model, we have developed a simple equivalent circuit, which reproduced well the kink's dc characteristics, its time evolution in the nanosecond range, and its dependence on illumination. Index Terms—HEMT, InAlAs, InGaAs, kink effect. I

Year: 1995
OAI identifier: oai:CiteSeerX.psu:
Provided by: CiteSeerX
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • (external link)
  • (external link)
  • Suggested articles

    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.