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A new physical model for the kink effect on InAlAs/InGaAs HEMT’s

By Mark H. Somerville, Er Ernst, Jesús A. Del Alamo and Senior Member

Abstract

Abstract—We present a new model for the the kink effect in In-AlAs/InGaAs HEMT’s. The model suggests that the kink is due to a threshold voltage shift which arises from a hole pile-up in the extrinsic source and an ensuing charging of the surface and/or the buffer-substrate interface. The model captures the many of the observed behaviors of the kink, including the kink's dependence on bias, time, temperature, illumination, and device structure. Using the model, we have developed a simple equivalent circuit, which reproduced well the kink's dc characteristics, its time evolution in the nanosecond range, and its dependence on illumination. Index Terms—HEMT, InAlAs, InGaAs, kink effect. I

Year: 1995
OAI identifier: oai:CiteSeerX.psu:10.1.1.135.9214
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