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0-3 Q. cm. The n * diffusion was 20 (im deep with a sheet resistance of 9 £2/°. The p layer had a final sheet resistance of 300 W D- A large collector area (30 Aim X 30 urn) and 10 /im layout rules were chosen to simplify the processing. A photomicrograph of a typical test device is shown i

Year: 2009
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