Abstract. Experimental and numerical investigation of the effect of material anisotropy on the self-positioning of epitaxial nanostructures has been performed. The self-positioning occurs due to lattice mismatch between two epitaxial material layers (GaAs and In0.2Ga0.8As) of a hinge. Both materials have cubic crystal symmetry and possess anisotropic mechanical properties. Dependance of a hinge curvature radius on material orientation angle was obtained experimentally by creating self-positioning hinges with different angles between the hinge axis and material crystallographic axes. Same self-positioning structures were modeled by solving geometrically nonlinear problems with a help of the finite element method. Experimental and numerical values of the hinge curvature radius are in qualitative agreement. It is found that material anisotropy significantly affects a shape of self-positioning structures. ‡ Electronic mail
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