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Neutron-induced semiconductor soft error simulation using the PHITS Monte Carlo

By Takanobu Handa, Koji Niita and Hidenori Sawamura


We have performed a neutron-induced soft error simulation using the PHITS Monte Carlo simulator. We validated our technique by comparing the MBGR (Modified Burst Generation Rate) values estimated by our simulation and a well known MBGR table by Fujitsu Laboratories, Ltd. We also evaluated a neutron-induced soft error rate of a SRAM cell as a function of the critical charge as well as a representation using a generally used unit, FIT rate error/10 9 hour/deviceĀ”. 1 Soft error A charge deposition in a semiconductor memory cell by a cosmic-ray radiation causes a temporary bit information upset. This phenomenon is known as a soft error or also called as a single event upset. Cosmic-ray neutron is one of the most important source of the soft error on the ground. A neutron-nucleus interaction generates ions, protons and other particles. These ions and protons induce electron-hole pairs in a memory cell. Soft error occurs when the charge is greater than a critical charge. Figure 1 shows an image view of a soft error process. By the evolution of semiconductor manufacturing processes, soft error problem is expected to be more serious in futur

Year: 2009
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