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Modulation Characteristics of High Speed ( GHz) Tunneling Injection InP/InGaAsP 1.55 m Ridge Waveguide Lasers Extracted from Optical and Electrical Measurements

By David Klotzkin, Kao-chih Syao, Pallab Bhattacharya, C. Caneau and R. Bhat

Abstract

tunneling injection lasers are fabricated using a conventional single mode ridge waveguide fabrication process and characterized. The lasers consist of an eight quantum-well straincompensated gain region and a 30- ˚A InP tunneling barrier. The bandwidth of these lasers is measured to be 20 GHz with a damping limited bandwidth extracted from the K-factor (determined from optical modulation measurements) of 26 GHz. To our knowledge, this is the highest measured bandwidth recorded for an InP-based simple ridge waveguide structure. The differential gain is measured to be as high as 1 2 10 015 cm 2, with a measured gain compression coefficient of 5 2 10 017 cm 3. It is shown that the K-factor can also be extracted solely from measurements of the small signal electrical impedance. The carrier escape time ( �� ™ is determined to be 0.5 ns, independent of bias. This high frequency performance is achieved with a very simple device structure at room temperature under constant drive currents. I

Year: 2008
OAI identifier: oai:CiteSeerX.psu:10.1.1.134.431
Provided by: CiteSeerX
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