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MRSInternet Journal Nitride Semiconductor Research Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

By B. Beaumont, M. Vaille, G. Nataf, A. Bouillé, J. -c. Guillaume, P. Vénnègues and S. Haffouz

Abstract

until coalescence to produce smooth and optically flat thick GaN layers. A GaN epitaxial layer is first grown using atmospheric pressure Metalorganic Vapour Phase Epitaxy on a {0001} Al 2 O 3. substrate. Then a 30Å silicon nitride dielectric film is deposited in-situ by reaction of silane and ammonia to form a selective mask. Afterwards, the openings and the figures in the dielectric films are achieved using standard photolithographic technology. Stripes openings in the mask, revealing free GaN surface, are aligned in the 〈1010 〉 direction. Typical stripes spacing and width are 10 μm and 5 μm respectively. These patterned layers are further on used for epitaxial regrowth of GaN by MOVPE. The growth anisotropy and therefore the coalescence process is achieved by introducing (MeCp) 2 Mg in the vapour phase. A two-step process is reported which allows a dramatic reduction of threading dislocations density not only above the masked areas but also above the windows opened in the mask. With this process, very sharp bound exciton luminescence peaks are measured at low temperature in the overgrown GaN.

Year: 2008
OAI identifier: oai:CiteSeerX.psu:10.1.1.133.9136
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