In this study, the SnO2 nanoparticle powders were compacted into a disk shape form of under a ultrahigh pressure up to 49.6 GPa. Complex impedance analysis of nano-SnO2 thick film/electrode system was \ud studied as a function of applied potential. A calculated Mott– Schottky plot for the film is presented. Both \ud flat-band potential and donor concentration were estimated from the space charge capacitance at a definite \ud frequency. The film can be described as an n-type semiconductor with a high concentration of donors. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3482
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