Evaluation of Laser Doping of Si from MCLT Measurement


The measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive to the doping laser energy

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oai:doaj.org/article:a2725b4b7c8f4e29bdc1e94434c5a2b6Last time updated on 6/3/2019

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