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Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

By V. Mortet, E. Bedel-Pereira, J Bobo, Fuccio Cristiano, Christian Strenger, V. Uhnevionak, A. Burenkov and A.J. Bauer

Abstract

International audienceEffect of a shallow nitrogen implantation in the channel region of n-channel 4H-SiC Hall bar MOSFETs on their electrical properties has been characterized by Hall effect. A significant improvement of Hall mobility in normally-off devices is observed with increasing nitrogen implantation dose up to 10 13 cm-2 with a peak Hall mobility of 42.4 cm 2 .V-1 .s-1. Coulomb scattering as dominant scattering mechanism up to room temperature is demonstrated using temperature dependent MOS-Hall effect characterization

Topics: nitrogen implantation, Coulomb scattering, charge carrier density, Hall mobility, 4H-SiC, MOSFET, Hall effect, [PHYS]Physics [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI]Engineering Sciences [physics], [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Publisher: 'Trans Tech Publications, Ltd.'
Year: 2013
DOI identifier: 10.4028/www.scientific.net/msf.740-742.525
OAI identifier: oai:HAL:hal-01921860v1
Provided by: HAL-INSA Toulouse
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