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Influence of Semicon Shields on the Dielectric Loss of XLPE Cables

By Tong Liu, John C. Fothergill, Stephen J. Dodd and Ulf Nilsson

Abstract

Dielectric response measurement techniques in both time and frequency domains are studied in order to measure the dielectric loss of XLPE cables, which have very low losses. A high sensitivity transformer ratio bridge system, which can measure loss tangents as low as 10-5, has been developed with the ability to measure these cables. A tuned amplifier was designed to help to extend the frequency range from 200Hz to 20kHz. Different model cables from Borealis AB with different semiconducting materials have been measured in the temperature range 15⁰C to 120⁰C. It is found that the semiconducting layers dominate the dielectric loss in the insulation system of the XLPE cables, when the outer semicon is treated as measuring electrode. In this case, steadily increasing dielectric loss has been measured at higher frequencies. The resistivity of the semiconducting materials was measured, which confirmed that the increasing slope is due to the semiconducting layers. After using conductive tapes to wrap the cable samples, monotonically decreasing losses were measured, corresponding to the actual dielectric frequency response of the XLPE cables. It is concluded that the axial resistance of semiconducting shields have a substantial influence on the dielectric loss of XLPE cables, especially for dielectric response in high frequency range. A device on measuring the loss of such cables is presented.Peer-reviewedPost-prin

Topics: Cables, Dielectric loss measurement, Dielectric losses, Dielectric materials, Dielectric measurements, Electrical resistance measurement, Frequency measurement, Loss measurement, Semiconductivity, Semiconductor materials
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Year: 2009
DOI identifier: 10.1109/CEIDP.2009.5377792
OAI identifier: oai:lra.le.ac.uk:2381/10039
Journal:

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Citations

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