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Fabrication of a nanoelectromechanical resonator in a, standard, 45 nanometer CMOS SOI technology

By Hossein Pajouhi

Abstract

Double-clamped nano-electro-mechanical (NEM) resonators are designed and fabricated in a standard complementary metal-oxide semiconductor (CMOS) Silicon on Insulator (SOI) technology in order to achieve high resolution readout of the NEM device. A simple post-fabrication technology with no lithographic step is utilized to carve out and release these vibrating NEM resonators. The resonance frequency beyond the system noise level can be detected by on-chip CMOS circuitry. Therefore, external precision instrumentations that are often used in such vibration measurements are avoided, leading to an increase in the readout resolution and bandwidth and a possibility of a single-chip operation. The highlight of this thesis is to come up with a solution to implement the structure in a standard CMOS SOI process with high degrees of yield and reproducibility

Topics: Electrical engineering|Nanotechnology
Publisher: 'Purdue University (bepress)'
Year: 2013
OAI identifier: oai:docs.lib.purdue.edu:dissertations-14328
Provided by: Purdue E-Pubs
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