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High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer

By T. E. F. M. Standaert, M. Schaepkens, N. R. Rueger, P. G. M. Sebel, G. S. Oehrlein and J. M. Cook
Publisher: 'American Vacuum Society'
DOI identifier: 10.1116/1.580978
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Provided by: Crossref

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