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A method for atomic layer deposition of complex oxide thin films

By Brian Robert Beatty

Abstract

Advanced technologies derive many of their capabilities from the advanced materials that they are made from. Complex oxides are a class of materials which are driving technological advancement in a host of di erent directions. These highly functional materials have a great variety of useful properties, which can be chosen and even engineered.Advanced materials require advanced deposition methods. Atomic layer deposition (ALD), a variant of chemical vapor deposition (CVD), is gaining more use in industry for its ability to provide ultra-high lm thickness resolution (down to 0.1 nm), capability to conformally coat three-dimensional structures, and its high uniformity across large surface areas. Additionally, ALD processes provide a possibility to improve economic and environmental viability of the process as compared to CVD by using and wasting less toxic reactants and expelling fewer nano-particulate byproducts.ALD processes are highly mature for many binary oxides commonly used in the semiconductor industries, however processes for depositing heavy metal oxides and complex oxides - oxides containing two or more separate metallic cations | are sorely lacking in literature.The primary focus of this work is the development of a process for depositing the complex perovskite oxide lead titanate (PbTiO3), an end group of the lead zirconate titanate family (PbZrxTi1-xO3), which has valuable technical applications as well as serves as a template for applying this research into other material systems.The author gratefully acknowledges the Army Research O ce (ARO) for their support of this project under the funding provided by Grant # W911NF-08-1-0067.M.S., Materials Science and Engineering -- Drexel University, 201

Topics: Materials science, Ferroelectric thin films, Oxides
Publisher: Drexel University
Year: 2012
OAI identifier: oai:idea.library.drexel.edu:idea_4029

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