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利用改进的固相外延技术改善CMOS/SOS器件的特性

By 刘忠立, 和致经, 于芳, 张永刚 and 郁元桓

Abstract

CMOS/SOS器件同体硅CMOS器件相比,载流子迁移率较低,沟道漏电电流放大,它们主要是由异质外延硅膜缺陷,特别是靠近硅蓝宝石界面的硅膜缺陷造成的。该文描述一种改进的固相外延技术提高外延硅膜质量进而改善CMOS/SOS器件特性的实验结果

Topics: 半导体器件
Year: 1999
OAI identifier: oai:ir.semi.ac.cn:172111/18927
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