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The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

By LC Guo, XL Wang, CM Wang, HL Mao, JX Ran, WJ Luo, XY Wang, BZ Wang, CB Fang, GX Hu and Peoples R China. 电子邮箱地址: lcguo@semi.ac.cn Beijing 100083 Novel Mat Lab Inst Semicond Chinese Acad Sci LC Guo

Abstract

The sheet carrier concentrations, conduction band profiles and amount of free carriers in the barriers have been determined by solving coupled Schrodinger and Poisson equation self-consistently for coherently grown Al0.3Ga0.7N/GaN and Al0.3Ga0.7N/AlN/GaN structures on thick GaN. The Al0.3Ga0.7N/GaN heterojunction structures with and without 1 nm AlN interlayer have been grown by MOCVD on sapphire substrate, the physical properties for these two structures have been investigated by various instruments such as Hall measurement and X-ray diffraction. By comparison of the theoretical and experimental results, we demonstrate that the sheet carrier concentration and the electrons mobility would be improved by the introduction of an AlN interlayer for Al0.3Ga0.7N/GaN structure. Mechanisms for the increasing of the sheet carrier concentration and the electrons mobility will be discussed in this paper. (C) 2007 Elsevier Ltd. All rights reserved

Topics: Gan, Hemt, 2deg, Mobility, Polarization, 半导体材料, modulation-doped field-effect transistors, electron gas, migration, internal, electromagnetic wave polarisation, hemts (transistors), hfets (transistors), hetero-field-effect transistors, high-electron-mobility transistors, modfets (transistors), sdhts (transistors), selectively-doped heterojunction transistors, tegfets (transistors), two-dimensional electron gas field-effect transistors, high electron mobility transistors, hemt, heterostructure field effect transistors, hfet, modfet, modulation doped field effect transistors, sdht, selectively doped heterojunction field effect transistors, tegfet, two dimensional electron gas field effect transistors, power hemt, power modfet, hemt (electronics), 电子气, fermi gas, hole gas, luttinger liquid, rpa calculations, random phase approximation, tamm-dancoff approximation, two-dimensional electron gas, 2d electron gas, 2deg, two-dimensional hole gas, 2d hole gas, rpa, tda, 迁移率, internal migration, mobility, beweglichkeit, migration, mobilitaet, mobilite, gamma ray scattering, gamma ray spectra, plane polarization, gamma spectroscopy, gamma ray transmission, polarization, polarizing, electromagnetic wave polarization, x-ray polarisation, gamma-ray polarisation, gamma-ray polarization, gamma-ray scattering, gamma-ray spectra, gamma spectra, gamma-ray spectroscopy, perturbed angular correlation, pac, tdpac, time differential perturbed angular correlation, polarisation, circular polarisation, circular polarization, elliptical polarisation, plane polarisation, p1-derived artificial chromosome, gamma ray spectroscopy, overpotential, physics advisory committee
Year: 2008
OAI identifier: oai:ir.semi.ac.cn:172111/6626
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