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Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

By GQ Lin, YP Zeng, XL Wang, HX Liu and Peoples R China. 电子邮箱地址: lingq@semi.ac.cn Beijing 100083 POB 912 Novel Mat Lab Inst Semicond Chinese Acad Sci GQ Lin

Abstract

Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy (GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72 nm. When the thickness of AlN buffer is 36 nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72 nm

Topics: Rheed, Interlayer, Pressure, Nitrides, Layers, Mbe, 半导体物理, reflection high energy electron diffraction, interlayer, pressure, nitrides, layers, atomic layer deposition, reflection heed, rheed (solids), rheed, 压力, 压强, druck, pression, surface pressure, absolute pressure, ambient pressure, nitride, nitrures, lamina, plies, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, movpe, omcvd, omvpe, molecular beam epitaxial growth, mbe, migration-enhanced epitaxy, vapour phase epitaxial growth, hot wall epitaxial growth, vapor phase epitaxial growth, vpe, cvi (fabrication), ald, molecular beam epitaxy, coulomb-bethe, many-body expansion
Year: 2008
OAI identifier: oai:ir.semi.ac.cn:172111/6368
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