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[1]Benzothieno[3,2-b]benzothiophene (BTBT) derivatives: Influence in the molecular orientation and charge delocalization dynamics

By Ana Buzzi Fernández, Amanda Garcez da Veiga, Almaz Aliev, Christian Ruzié, Guillaume Garbay, Basab Chattopadhyay, Alan A.R. Kennedy, Yves Geerts and Maria Luiza Miranda Rocco


Using near-edge X-ray absorption fine structure (NEXAFS) and resonant Auger spectroscopy (RAS) in conjunction with the core-hole clock methodology the electronic structure, molecular ordering and orientation and charge transfer dynamics in the femtosecond time scale of 2,7-di-tert-pentyl[1]benzothieno[3,2-b]benzothiophene (di(Me)2Pr-BTBT), 2,7-di-iso-propyl[1]benzothieno[3,2-b]benzothiophene (diiPr-BTBT) and 2,7-di-tert butyl[1]benzothieno[3,2-b]benzothiophene (ditBu-BTBT) films were investigated. Total electron yield (TEY) and fluorescence yield (FY) NEXAFS spectra were recorded with the aim of determining the preferred molecular orientation of the oligomers at the surface and in the bulk. Angular dependent sulfur 1s NEXAFS spectra for diiPr-BTBT and ditBu-BTBT films deposited onto FTO (fluorine doped tin oxide) point to well-organized films with a preferred edge-on geometry, while for the di(Me)2Pr-BTBT film little variation is seen, indicating that the film matches its herringbone crystal packing. Films prepared on ITO (indium tin oxide) and silicon were also investigated by TEY and FY NEXAFS. Greater film ordering is observed in the bulk. The electron charge transfer time following sulfur K-edge main resonance was calculated. The ditBu-BTBT films showed the lowest charge transfer time as well as greater molecular organization, pointing to an increased coupling, as compared to the other oligomers.SCOPUS: ar.jinfo:eu-repo/semantics/publishe

Topics: Métallurgie et mines, Physique de l'état condense [struct. électronique, etc.], Physique de l'état condense [struct. propr. thermiques, etc.], Physique de l'état condense [supraconducteur], Charge transfer dynamics, Near-edge X-ray absorption fine structure, Oligomers, Organic field effect transistors
Publisher: 'Elsevier BV'
Year: 2019
DOI identifier: 10.1016/j.matchemphys.2018.09.064
OAI identifier:
Provided by: DI-fusion
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