InGaN light emitting diodes for 415 nm-520 nm spectral range by plasma assisted MBE

Abstract

In this work we study the growth of the Light Emitting Diodes (LEDs) by Plasma Assisted MBE (PAMBE). The active LEDs region was grown to cover the spectral range spanning from 415 nm to 520 nm. We demonstrate efficient LEDs with the highest optical power output of 1.5 mW and 20 mA for 415 nm. For longer wavelengths we observe a drop of the optical power. The reduction of the quantum efficiency for green emission can be related to the presence of strong built\u2010in piezoelectric fields or increased number of nonradiative recombinarion centers.Peer reviewed: YesNRC publication: Ye

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Last time updated on 13/02/2019

This paper was published in NRC Publications Archive.

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