Article thumbnail

Lateral Dopant Diffusion Length Measurements Using Silicon Microring Resonators

By Vadivukkarasi Jeyaselvan and Shankar Kumar Selvaraja


An electro-optic device in silicon such as a photodetector and a modulator requires doping to realize desired junctions. Doping Si is typically done using ion-implantation or the thermal diffusion process. Both processes rely on high-temperature anneal to either activate or drive the dopant into the bulk. As diffusion of dopants is a thermally driven process, knowledge of actual diffusion lengths is essential for efficient device designs. Unlike other methods, we present an integrated-silicon-photonic-device-based lateral diffusion length characterization technique. A silicon microring resonator is used as a test device for the demonstration in a silicon-on-insulator substrate. Lateral diffusion lengths of 0.35 and 0.69 mu m have been obtained for the drive-in temperatures of 950 degrees C and 1100 degrees C, respectively. We also present process simulation results to validate the experimental result

Topics: Centre for Nano Science and Engineering
Year: 2018
DOI identifier: 10.1109/LPT.2018.2879574
OAI identifier:
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • (external link)
  • (external link)
  • Suggested articles

    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.