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Low frequency noise statistical characterization of 14nm FDSOI technology node

By E. Ioannidis, C. Theodorou, S. Haendler, M.-K. Joo, E. Josse, C. Dimitriadis and G. Ghibaudo


session 10: Advanced characterization techniquesInternational audienceIn this paper, we performed a statistical analysis of the low-frequency noise (LFN) in 14nm FDSOI n-MOS devices. Front and back gate interfaces were characterized, revealing an equal contribution to the total noise level. Finally, the LFN variability is analyzed and a comparison to previous CMOS technologies is presented

Topics: characterization, CMOS, Low-frequency Noise, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.TRON]Engineering Sciences [physics]/Electronics
Publisher: 'Institute of Electrical and Electronics Engineers (IEEE)'
Year: 2015
DOI identifier: 10.1109/ULIS.2015.7063803
OAI identifier: oai:HAL:hal-02002261v1
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