Low frequency noise statistical characterization of 14nm FDSOI technology node

Ioannidis, E.; Theodorou, C.; Haendler, S.; Joo, M.-K.; Josse, E.; Dimitriadis, C.; Ghibaudo, G.

oai:HAL:hal-02002261v1

Low frequency noise statistical characterization of 14nm FDSOI technology node

Authors: E. Ioannidis
C. Theodorou
S. Haendler
M.-K. Joo
E. Josse
C. Dimitriadis
G. Ghibaudo
Publication date: 26 January 2015
Publisher: IEEE
Doi

Abstract

session 10: Advanced characterization techniquesInternational audienceIn this paper, we performed a statistical analysis of the low-frequency noise (LFN) in 14nm FDSOI n-MOS devices. Front and back gate interfaces were characterized, revealing an equal contribution to the total noise level. Finally, the LFN variability is analyzed and a comparison to previous CMOS technologies is presented

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Hal - Université Grenoble Alpes

oai:HAL:hal-02002261v1

Last time updated on 02/02/2019

This paper was published in Hal - Université Grenoble Alpes.

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