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EBIC study of Au / n-type GaN Schottky contacts

By Grigore Moldovan, Ian Harrison and Paul D. Brown

Abstract

The performance of Au / n-type GaN Schottky contacts is strongly dependent on the GaN surface processing prior to contacting. Current-voltage and EBIC line scans demonstrate that KOH treatment acts to degrade the Schottky contacts. EBIC imaging reveals the differing sub-grain boundary structures of MBE and MOCVD grown GaN / sapphire. The KOH treatment acts to uniformly change the properties of the GaN surface, rather than having a localised effect

Publisher: IOP Publishing Ltd
Year: 2003
OAI identifier: oai:eprints.nottingham.ac.uk:1464
Provided by: Nottingham ePrints

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